Interface control and band offset at the Ga0.52In0.48P on GaAs heterojunction
Identifieur interne : 011E01 ( Main/Repository ); précédent : 011E00; suivant : 011E02Interface control and band offset at the Ga0.52In0.48P on GaAs heterojunction
Auteurs : RBID : Pascal:00-0337151Descripteurs français
- Pascal (Inist)
- 7320A, 7320D, 6835C, 8115H, 7361E, 7340K, Etude expérimentale, Gallium composé, Indium composé, Semiconducteur III-V, Etat interface, Structure interface, Couche épitaxique semiconductrice, Croissance semiconducteur, Barrière Schottky, Bande conduction, Epitaxie jet chimique, Gallium arséniure, Hétérojonction semiconducteur.
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Abstract
A new switching procedure was applied in the growth of the lattice-matched heterojunction of Ga0.52In0.48P/GaAs by gas source molecular beam epitaxy. The new switching procedure exposed the GaAs surface to the Ga source instead of thermally cracked AsH3 or PH3 before starting the growth of the Ga0.52In0.48P layer. The interface charge density and the conduction band offset were determined by measuring the Schottky barrier height using current versus voltage and capacitance versus voltage characteristics. The interface charge density could be reduced to near zero using the new switching procedure with an exposure time of 64 s. The value of the conduction band offset was 0.2 eV at the interface of zero charge. © 2000 American Vacuum Society.
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Nathan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0337151</idno><date when="2000-07-20">2000-07-20</date><idno type="stanalyst">PASCAL 00-0337151 AIP</idno><idno type="RBID">Pascal:00-0337151</idno><idno type="wicri:Area/Main/Corpus">012A76</idno><idno type="wicri:Area/Main/Repository">011E01</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical beam epitaxy</term><term>Conduction bands</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Interface structure</term><term>Schottky barriers</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Semiconductor heterojunctions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320A</term><term>7320D</term><term>6835C</term><term>8115H</term><term>7361E</term><term>7340K</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Etat interface</term><term>Structure interface</term><term>Couche épitaxique semiconductrice</term><term>Croissance semiconducteur</term><term>Barrière Schottky</term><term>Bande conduction</term><term>Epitaxie jet chimique</term><term>Gallium arséniure</term><term>Hétérojonction semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A new switching procedure was applied in the growth of the lattice-matched heterojunction of Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs by gas source molecular beam epitaxy. 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